An interdigital gate MOSFET for photodetection

نویسندگان

  • F. Hobar
  • S. Laval
  • D. Pascal
  • F. Kerrour
چکیده

-Interdigital gate Si-MOSFET have been fabricated and electrically tested. Theb photodetection performances are also evaluated and compared with straight

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

A Novel Hybrid Nano Scale MOSFET Structure for Low Leak Application

In this paper, novel hybrid MOSFET(HMOS) structure has been proposed to reduce the gate leakage current drastically. This novel hybrid MOSFET (HMOS) uses source/drain-to-gate non-overlap region in combination with high-K layer/interfacial oxide as gate stack. The extended S/D in the non-overlap region is induced by fringing gate electric field through the high-k dielectric spacer. The gate leak...

متن کامل

Design of a Resonant Suspended Gate MOSFET with Retrograde Channel Doping

High Q frequency reference devices are essential components in many Integrated circuits. This paper will focus on the Resonant Suspended Gate (RSG) MOSFET. The gate in this structure has been designed to resonate at 38.4MHz. The MOSFET in this device has a retrograde channel to achieve high output current. For this purpose, abrupt retrograde channel and Gaussian retrograde channels have bee...

متن کامل

Analytical Threshold Voltage Computations for 22 nm Silicon-on-Diamond MOSFET Incorporating a Second Oxide Layer

In this paper, for the first time, an analytical equation for threshold voltage computations in silicon-on-diamond MOSFET with an additional insulation layer is presented; In this structure, the first insulating layer is diamond which covered the silicon substrate and second insulating layer is SiO2 which is on the diamond and it is limited to the source and drain on both sides. Analytical solu...

متن کامل

Modelling of Parasitic Capacitances for Single-gate, Double-gate and Independent Double-gate MOSFET

This paper discusses the type of capacitances for Single Gate MOSFET and Double Gate MOSFET including their quantity. The effect of parasitic capacitance makes double gate MOSFET more suitable component for the designing of digital logic switches than single gate MOSFET. Here, we introducing Independent double gate MOSFET operation based on VeSFET concept. Then introducing with the total capaci...

متن کامل

Channel thickness dependency of high-k gate dielectric based double-gate CMOS inverter

This work investigates the channel thickness dependency of high-k gate dielectric-based complementary metal-oxide-semiconductor (CMOS) inverter circuit built using a conventional double-gate metal gate oxide semiconductor field-effect transistor (DG-MOSFET). It is espied that the use of high-k dielectric as a gate oxide in n/p DG-MOSFET based CMOS inverter results in a high noise margin as well...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2016